Silicon technology
Isotropical- und anisotropical silicon etch techniques enable the three dimensional structuring of silicon.
 
Vertical ditches and walls in silicon
  Vertical structure in silicon
 
By anisotropical deep reactive etching of silicon any structures with dimensions even below 1 µm with vertical side walls can be generated. That is how aspect ratios for ditches of up to 5 and such for walls bigger than 10 can be reached.
 
Multistep structures with vias
  Multistep silicon structure
 
The 3D-silicontechnology makes it possible to realize multistep structures and others with vias. The ultimate hight can be about 1 mm.
 
Isotropical etched structures
  Isotropical etched silicon structure
 
Apart from the structures with the vertical walls we can also fabricate them with concave walls which can be applied to microfluidic structures.